RF transistors of 1.8 to 2GHz
Categories: TransistorsPosted on Wednesday, February 6, 2008 by electron
Intended for CDMA and TDMA applications in the 1.8 to 2GHz band, Ericsson’s PTF10112 RF transistor employs Goldmos technology to improve overall RF performance.
With a minimum output power of 60W at 1dB compression, the device is a suitable alternative to identically packaged MRF286 types. It offers a gain of around 3dB higher than bipolar equivalents and operates from a standard 28V supply.
The device has a typical efficiency of 41% and can provide a thermal resistance of 0.74 degrees C/W and a drain-source breakdown voltage of 65V. The minimum power gain is 12dB at 1.95GHz, and each device exhibits a flat response of +/-0.3dB over the 1.93 to 1.99GHz PCN band.